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  1. Hace 1 día · These scaffolds possess macro-, micro-, and nano- structured pores and the porosity can be tailored for specific applications. These 3D all-carbon scaffolds/architectures may be used for the fabrication of the next generation of energy storage, supercapacitors, field emission transistors, high-performance catalysis, [200] photovoltaics, and biomedical devices and implants.

  2. Hace 5 días · In summary, operando CND studies revealed the existence of hierarchical polar laminates in PMN-0.32PT as well as their role in the field-induced relaxor response. The polar laminates arise from the hierarchical self-organization of twinned monoclinic PNDs separated by 90° domain walls.

  3. Hace 4 días · Experimental and theoretical study of linear and nonlinear optical properties of CsGeI 3 material in the form of high-quality thin film and NPs of different sizes reveal that coupling incident light with a magnetic dipole resonance leads to a strong enhancement of SHG by one order of magnitude.

  4. Hace 5 días · Two-dimensional (2D) InSe and PtTe 2 have drawn extensive attention due to their intriguing properties. However, the InSe monolayer is an indirect bandgap semiconductor with a low hole mobility. van der Waals (vdW) heterostructures produce interesting electronic and optoelectronic properties beyond the existing 2D materials and endow totally ...

  5. Hace 2 días · The nanometre ( SI symbol: nm) is a unit of length in the metric system equal to 10−9 metres ( 1 1 000 000 000 m = 0.000 000 001 m ). To help compare different orders of magnitude, this section lists lengths between 10 −9 and 10 −8 m (1 nm and 10 nm). 1 nm – diameter of a carbon nanotube.

  6. Hace 5 días · Nano Lett, 2019, 19: 3654–3662. Article Google Scholar Wu Z, Huang X, Xiang X, et al. Electro-superlubric springs for continuously tunable resonators and oscillators. Commun Mater, 2021, 2: 104. Article Google Scholar Kim S H, Asay D B, Dugger M T. Nanotribology and MEMS. Nano Today, 2007, 2: 22–29

  7. Hace 1 día · The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties and myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top–down processes or achieving extensive control over the large-area growth of these microstructures via bottom-up methods, thereby impacting their ...