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Part #: ZENER. Datasheet: 1MbKb/14P. Manufacturer: Zibo Seno Electronic Engineering Co.,Ltd. Description: ZENER DIODES. 1 Results.
1N4728A - 1N4761A. 1.0W ZENER DIODE. 1.0 Watt Power Dissipation. 3.3V - 75V Nominal Zener Voltage. Standard VZ Tolerance is 5%. Lead Free Finish, RoHS Compliant (Note 2)
1N4733 Product details. FEATURES. ♦ Silicon Planar Power Zener Diodes. ♦ For use in stabilizing and clipping circuits with high power rating. ♦ Standard Zener voltage tolerance is ±10%. Add suffix “A” for ±5% tolerance. Other Zener voltages and tolerances are available upon request.
Diodos Zener para la fuente de alimentación estabilizada Otros con el mismo archivo para el datasheet: 1N4743A, 1N4748A, 1N4739A, 1N4741A, 1N4735A, Transferencia Directa 1N4733A datasheet de Hitachi Semiconductor: pdf 38 kb: 5,1 V, 1 W zener diodo de silicio Otros con el mismo archivo para el datasheet:
1N4742 Product details. FEATURES. ♦ Silicon Planar Power Zener Diodes. ♦ For use in stabilizing and clipping circuits with high power rating. ♦ Standard Zener voltage tolerance is ±10%. Add suffix “A” for ±5% tolerance. Other Zener voltages and tolerances are available upon request.
FEATURES. Silicon planar power Zener diodes. For use in stabilizing and clipping circuits with high power rating. Standard Zener voltage tolerance is ± 5 %. Material categorization: for definitions of compliance please see. www.vishay.com/doc?99912.
Descripción Electrónicos: Zener Diodes. Fabricante Electrónico: Fairchild Semiconductor.
DIODOS ZENER Otros con el mismo archivo para el datasheet: 1N4757, 1N4758, 1N4759, 1N4760, 1N4761, Transferencia Directa 1N4733 datasheet de General Semiconductor: pdf 85 kb: DIODOS ZENER PLANAR DE LA ENERGÍA DEL SILICIO: Transferencia Directa 1N4733 datasheet de Semtech: pdf 254 kb: 1W diodo zener. Nominal 5.1V Tensión Zener. Tolerancia del 10%.
Features: High reliability. Very sharp reverse characteristic. Zener voltage 3.3V to 12V. Vz-tolerance ±5%. Absolute Maximum Ratings Tj = 25°C. Parameter. Test Conditions.
Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature (TL) at 30°C, 9.5mm (3/8 inches) from the diode body.
